high voltage fast switching npn power transistor APT13003S data sheet 1 aug. 2011 rev. 1. 2 bcd semiconductor manufacturing limited general description the APT13003S series are high voltage, high speed switching transistors special ly designed for off-line switch mode power supplies with low output power. the APT13003S series are av ailable in to-92 and to- 126 packages. features high switching speed high collector-emitter voltage low cost bulk and ammo packin g to-92 package and to-126 package applications battery chargers for mobile phone standby power supply figure 1. package types of APT13003S figure 2. pin configurations of APT13003S pin configuration to-92 to-92 (ammo packing) to-126 u package (to-126) (top view) (front view) (bulk packing) 1 2 3 base emitter collector 1 2 3 base emitter collector z package z package (to-92(bulk packing)) (to-92(ammo packing)) 3 2 1 emitter base collecto r
high voltage fast switching npn power transistor APT13003S data sheet 2 aug. 2011 rev. 1. 2 bcd semiconductor manufacturing limited parameter symbol value unit collector-emitter voltage (v be =0) v ces 700 v collector-emitter voltage (i b =0) v ceo 450 v emitter-base voltage (i c =0) v ebo 9v collector current i c 1.3 a collector peak current (pulse) (note 2) i cm 2.6 a base current i b 0.65 a base peak current (pulse) (note 2) i bm 1.3 a power dissipation, t a =25 o c for to-92 p tot 1.1 w power dissipation, t c =25 o c for to-126 p tot 20 w operating junction temperature t j 150 o c storage temperature range t stg -55 to 150 o c note 1: stresses greater than those listed under "absolute maximum ratings" may cause permanent dama ge to the device. these are stress ratings only, and functiona l operation of the device at these or a ny other conditions beyond those indicated under "recommended operating co nditions" is not implied. exposure to "abs olute maximum ratings" for extended periods may affect device reliability. note 2: pulse test for pulse width < 5ms, duty cycle 10%. absolute maximum ratings (note 1) ordering information package part number marking id packing type lead free green lead free green to-92 APT13003Sz-g1 13003sz-g1 bulk APT13003Sztr-g1 13003sz-g1 ammo to-126 APT13003Su-e1 APT13003Su-g1 eu13003s gu13003s bulk circuit type s: APT13003S e1: lead free apt13003 - tr: ammo blank: bulk package z: to-92 u: to-126 bcd semiconductor's pb-free products , as designated with "e1" suffix in the pa rt number, are rohs compliant. products with "g1" suffix are available in green packages. g1: green
high voltage fast switching npn power transistor APT13003S data sheet 3 aug. 2011 rev. 1. 2 bcd semiconductor manufacturing limited parameter symbol value unit thermal resistance (junction-to-case) for to-92 jc 83.3 o c/w for to-126 6.25 thermal resistance (junction-to-ambient) for to-92 ja 113.6 o c/w for to-126 96 thermal characteristics parameter symbol conditions min typ max unit collector cut-off current (v be =-1.5v) i cev v ce =700v 10 a collector-emitter sustaining vo l t a g e v ceo (sus) i c =100 a 450 v collector-emitter saturation voltage (note 3) v ce (sat) i c =0.5a, i b =0.1a 0.3 v i c =1.0a, i b =0.25a 0.6 base-emitter saturation voltage (note 3) v be (sat) i c =0.5a, i b =0.1a 1.0 v i c =1.0a, i b =0.25a 1.2 dc current gain (note 3) h fe i c =0.5a, v ce =2v 13 30 i c =1.0a, v ce =2v 5 25 current gain bandwidth product f t v ce =10v, i c =0.1a 4 mhz turn-on time with resistive load ton i c =1a, v cc =125v, i b1 =0.2a, i b2 =-0.2a, t p =25 s 1.0 s storage time with resistive load ts 3.0 fall time with resistive load tf 0.5 ( t c =25 o c, unless otherwise specified.) electrical characteristics note 3: pulse test for pulse width 300 s, duty cycle 2%.
high voltage fast switching npn power transistor APT13003S data sheet 4 aug. 2011 rev. 1. 2 bcd semiconductor manufacturing limited figure 5. power derating curve figure 6. static characteristics typical performance characteristics figure 3. safe operating areas (to-92 package) figure 4. safe operating areas (to-126 package) 1 10 100 1000 1e-3 0.01 0.1 1 10 dc collector current i c (a) collector-emitter clamp voltage v ce (v) 1 10 100 1000 1e-3 0.01 0.1 1 10 collector current i c (a) collector-emitter clamp voltage v ce (v) dc 0 25 50 75 100 125 150 175 200 0 25 50 75 100 125 power derating factor(%) case temperature( o c) 01234567 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ $ i b =50ma i b =100ma i b =150ma i b =200ma i b =250ma i b =300ma i b =350ma collector current i c (a) collector-emitter voltage v ce (v) i b =400ma
high voltage fast switching npn power transistor APT13003S data sheet 5 aug. 2011 rev. 1. 2 bcd semiconductor manufacturing limited figure 7. dc current gain typical performance ch aracteristics (continued) figure 9. base-emitter saturation voltage figure 8. collector-emitter saturation voltage 0.01 0.1 1 10 0 5 10 15 20 25 30 35 40 t j =25 o c dc current gain collector current i c (a) t j =125 o c v ce =2v 0.1 1 10 0.01 0.1 1 10 t j =25 o c collector-emitter voltage v ce (v) collector current i c (a) t j =125 o c h fe =5 0.1 1 10 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 t j =125 o c t j =25 o c base-emitter voltage v be (v) collector current i c (a) h fe =5
high voltage fast switching npn power transistor APT13003S data sheet 6 aug. 2011 rev. 1. 2 bcd semiconductor manufacturing limited mechanical dimensions to-92 (bulk packing) unit: mm(inch) 2.420(0. 095) 2.660(0.105) 0.360(0. 014) 0.760(0. 030) 1. 600(0. 063) max 12.500(0.492) 15.500(0.610) 1.270(0. 050) typ 3.300(0.130) 3.700(0.146) 4.300(0.169) 4.700(0.185) 1.000(0. 039) 1.400(0. 055) 4.400(0.173) 4.800(0.189) 3.430(0.135) min 0.320(0. 013) 0.510(0. 020) 0. 000(0. 000) 0. 380(0. 015)
high voltage fast switching npn power transistor APT13003S data sheet 7 aug. 2011 rev. 1. 2 bcd semiconductor manufacturing limited mechanical dimens ions (continued) to-92 (ammo packing) unit: mm(inch) 4.300(0.169) 4.700(0.185) 1 2.500(0.492) 1 4.500(0.571) 2.540(0. 100 ) ty p 1.270(0. 050 ) typ 0. (0. 015) 0. 550 (0.022 ) 4.400(0. 173 ) 4. 800 ( 0. 189 ) 3. 430(0. 135 ) min 0. 320(0. 013 ) 0 . 510(0. 020) 0. 000(0.000 ) 0. 380(0. 015 ) max 1. 100(0. 043 1. 400(0. 055 ) 3.300(0.130) 3.800(0.150) 1. 600(0. 063) ) 380 2.500(0. 098 ) 4.000 ( 0.157 ) 13.000(0. 512 ) 15.000 ( 0.591 )
high voltage fast switching npn power transistor APT13003S data sheet 8 aug. 2011 rev. 1. 2 bcd semiconductor manufacturing limited to-126 unit: mm(inch) mechanical dimens ions (continued) 1.060(0.042) 1.500(0.059) 2.400(0.094) 2.900(0.114) 0.400(0.016) 0.600(0.024) 7.400(0.291) 8.200(0.323) 3.600(0.142) 10.600(0.417) 11.200(0.440) 0.660(0.026) 0.860(0.034) 14.500(0.570) 15.900(0.626) 1.700(0.067) 2.100(0.083) 1.170(0.046) 1.470(0.058) 2.280(0.090) typ 4.560(0.180) typ. 3.100(0.122) 3.550(0.140) 0.300(0.012) 0.000(0.000) 3.900(0.154) [ i
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited
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